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Neeru Chaudhary

Neeru Chaudhary

Punjab University, India

Title: Electrical resistivity change of SeTeAg compositions to thermal and pressure as stress

Biography

Biography: Neeru Chaudhary

Abstract

To understand the behavior of materials for applications in solid state electronic devices, the materials are to be exposed to different stresses such as thermal, electrical, humidity, optical, nuclear radiations, pressure (static or dynamic) etc. to better understand their structural, morphology, conduction, optical and sensing properties. The Se85-xTe15Agx compositions prepared from melt-quench technique were exposed to high pressure (0-10 GPa) and temperature (300K-373K). The results depict the change in resistivity with respect to pressure in forward as well as backward pressurization. These results depicts that there is very small change in resistivity with change in pressure and the change in resistivity with respect to pressure follows the same pattern, when the pressure is applied from atmospheric pressure to 10 GPa and vice versa. The results of resistivity change with the variation of silver in the compositions is also reported in this study. Similar results are observed in case of resistivity change with respect to temperature. Some deviation is observed in the results which is well explained with average coordination number, fermi level change and crystallinity.